November 25, 2024
44 S Broadway, White Plains, New York, 10601
INVESTING News TECH

Samsung Unveils Mind-Blowing 400-Layer Chip to Unlock 200TB AI Storage – Prepare to Be Amazed!

Samsung Unveils Mind-Blowing 400-Layer Chip to Unlock 200TB AI Storage – Prepare to Be Amazed!

Innovation in the tech industry is ever-evolving, with companies constantly pushing boundaries to meet the growing demands of consumers and businesses worldwide. Samsung, a leading name in the field, is once again breaking new ground with its plans to release a groundbreaking 400-layer vertical NAND flash chip by 2026.

Here are the key highlights of Samsung’s ambitious NAND roadmap:

  • BV NAND Technology: Samsung is set to introduce its cutting-edge V10 NAND technology, designed to cater to the escalating needs of AI data centers. This innovative approach, known as bonding vertical NANDFlash (BV NAND), aims to enhance density while minimizing heat buildup. By utilizing bonding technology to separately construct memory cells and peripheral circuitry on different wafers before merging them into a single chip, Samsung is creating what they have dubbed as a "dream NAND for AI."
  • Capacity Expansion: The BV NAND design offers a 1.6x increase in bit density per unit area, which will support ultra-high-capacity solid-state drives (SSDs) essential for AI applications. With the forthcoming 400-layer V10 NAND chips, Samsung anticipates surpassing the 200TB storage threshold for ultra-large AI hyperscaler SSDs, setting new standards in storage capacity while improving energy efficiency.
  • Future Roadmap: Looking ahead, Samsung plans to introduce the 11th-generation V11 NAND in 2027, promising a 50% faster data transfer speed to meet the escalating demands of data storage. Additionally, the tech giant has its sights set on developing chips exceeding a staggering 1,000 layers by 2030, solidifying its position as a leader in the high-capacity NAND market.

In the dynamic world of tech advancements, Samsung is not only focusing on NAND technology but also aiming to revolutionize the DRAM sector. By targeting the release of sixth-generation 1c DRAM and seventh-generation 1d DRAM by the end of 2024, alongside plans for sub-10 nm 0a DRAM by 2027, Samsung is poised to provide innovative solutions for high-performance AI chips.

Stay tuned as Samsung continues to push boundaries, setting new benchmarks, and driving innovation in the ever-evolving landscape of technology!

Leave feedback about this

  • Quality
  • Price
  • Service

PROS

+
Add Field

CONS

+
Add Field
Choose Image
Choose Video